| Numéro |
J. Phys. Colloques
Volume 41, Numéro C8, Août 1980
Fourth International Conference on Liquid and Amorphous Metals
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|---|---|---|
| Page(s) | C8-795 - C8-798 | |
| DOI | https://doi.org/10.1051/jphyscol:19808197 | |
J. Phys. Colloques 41 (1980) C8-795-C8-798
DOI: 10.1051/jphyscol:19808197
ELECTRONIC SPECTRA OF THE AMORPHOUS AuSi INTERFACE
A. Cros1, J. Derrien1, C. Mouttet1, J.P. Gaspard2, P. Lambin2 et F. Salvan11 Faculté des Sciences de Luminy, F-13288 Marseille, France
2 Université de Liège, Institut de Physique, B-4000 Sart-Tilman, Belgique
Abstract
Auger and Electron Loss Spectra (ELS) have been measured on Au deposited on the (111) Si surface at room temperature. The absence of LEED pattern and a structural analysis by Auger technique clearly show an amorphous surface composition close to the eutectic composition Au.81Si.19 irrespective of the amount of Au deposited. This is also confirmed by the evolution of ELS spectra during the growth process and during a subsequent sputtering. Evidence is found for the formation on top of the Si substrate of 1. a diffuse interface of ~ 20 Å thickness, 2. a pure Au film and 3. an eutectic amorphous surface. The stability of the surface composition is discussed using molecular dynamics calculations. The parameters of the model have been deduced from thermodynamical data on the Au-Si system. They reflect a strong attractive hetero-atomic interaction. The calculations show that the surface with eutectic concentration is in equilibrium with a pure gold substrate.