| Numéro |
J. Phys. Colloques
Volume 34, Numéro C6, Novembre 1973
CONGRÈS DU CENTENAIRE DE LA SOCIÉTÉ FRANÇAISE DE PHYSIQUEPROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES |
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|---|---|---|
| Page(s) | C6-65 - C6-65 | |
| DOI | https://doi.org/10.1051/jphyscol:1973616 | |
CONGRÈS DU CENTENAIRE DE LA SOCIÉTÉ FRANÇAISE DE PHYSIQUE
PROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES
J. Phys. Colloques 34 (1973) C6-65-C6-65
DOI: 10.1051/jphyscol:1973616
Mullard Research Laboratories, Redhill, Surrey, England
PROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES
J. Phys. Colloques 34 (1973) C6-65-C6-65
DOI: 10.1051/jphyscol:1973616
THE MEASUREMENT OF ELECTRON DIFFUSION LENGTHS IN GaAs
J. P. GOWERSMullard Research Laboratories, Redhill, Surrey, England
Abstract
The performance of reflection-mode semiconductor photocathodes is governed by two variables, the escape probability P and the electron diffusion length L. The measurement of L is therefore important and for p-GaAs two methods are described, one involves an analysis of the yield curve, the other utilizes Hackett's (1971) method. The results obtained are compared and discussed in terms of the doping profile near the surface. The diffusion length and hole mobility are used to calculate the minority carrier lifetime τ as a function of hole concentration. The variation of τ is in qualitative agreement with a simple model of recombination through unionized acceptors.