| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-186 - C6-186 | |
| DOI | https://doi.org/10.1051/jphyscol:1989640 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-186-C6-186
DOI: 10.1051/jphyscol:1989640
Physics Department, University of Port Elizabeth, Port Elizabeth, 6000 South Africa
International Workshop
J. Phys. Colloques 50 (1989) C6-186-C6-186
DOI: 10.1051/jphyscol:1989640
MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC-SEM
L.W. SNYMANPhysics Department, University of Port Elizabeth, Port Elizabeth, 6000 South Africa
Abstract
Single crystalline silicon bars were plastically deformed in the temperature range 850°C - 1200°C and annealed for periods ranging from 0 - 1 hour.