| Numéro |
J. Phys. Colloques
Volume 50, Numéro C5, Mai 1989
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | C5-617 - C5-635 | |
| DOI | https://doi.org/10.1051/jphyscol:1989573 | |
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
J. Phys. Colloques 50 (1989) C5-617-C5-635
DOI: 10.1051/jphyscol:1989573
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching-München, F.R.G.
J. Phys. Colloques 50 (1989) C5-617-C5-635
DOI: 10.1051/jphyscol:1989573
FUNDAMENTALS OF THE PLASMA INDUCED AND ASSISTED CVD : PLASMA PARAMETERS CONTROLLING THE CHEMICAL EQUILIBRIUM, THE DEPOSITION KINETICS AND THE PROPERTIES OF THE FILMS
S. VEPžEKInstitute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching-München, F.R.G.
Abstract
Fundamental processes which control the plasma induced and assisted Chemical Vapour Deposition of thin films and the crystal growth are briefly summarized. References to the relevant papers are given in order to enable the reader to get access to the more detailed data. The Partial Chemical Equilibrium which occurs in intense discharges is discussed in connection with the problem of the space charge sheath. The most recent progress achieved in the understanding of the mechanism of plasma induced deposition of amorphous silicon is summarized.