| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-291 - C4-294 | |
| DOI | https://doi.org/10.1051/jphyscol:1988460 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-291-C4-294
DOI: 10.1051/jphyscol:1988460
Plessey Research Caswell Ltd., Caswell, Towcester, Northants., GB-NN12 8EQ, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-291-C4-294
DOI: 10.1051/jphyscol:1988460
ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES
K. BARLOWPlessey Research Caswell Ltd., Caswell, Towcester, Northants., GB-NN12 8EQ, Great-Britain
Abstract
Electron beam exposure effects on metallised MOS devices have been studied. The results show that exposure leads to the generation of interface traps and positive oxide charge that can be almost completely removed using low temperature annealing (450°C). However, bulk oxide traps generated during exposure are only partly removed by the anneal and this leads to an increased trapping efficiency, which can seriously degrade MOS device integrity.