| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-109 - C5-111 | |
| DOI | https://doi.org/10.1051/jphyscol:1987519 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-109-C5-111
DOI: 10.1051/jphyscol:1987519
1 Philips I and E, Lelyweg 1, NL-7602 EA Almelo, The Netherlands
2 Department of Physics, University of Edinburgh, GB-Edinburgh EH9 3JZ, (Scotland) Great-Britain
J. Phys. Colloques 48 (1987) C5-109-C5-111
DOI: 10.1051/jphyscol:1987519
CHARACTERISATION OF NANOMETER-SCALE EPITAXIAL STRUCTURES BY GRAZING-INCIDENCE X-RAY SCATTERING
T.W. RYAN1, C. LUCAS2, P.D. HATTON2 et S. BATES21 Philips I and E, Lelyweg 1, NL-7602 EA Almelo, The Netherlands
2 Department of Physics, University of Edinburgh, GB-Edinburgh EH9 3JZ, (Scotland) Great-Britain
Abstract
By the use of grazing incidence scattering geometries and a triplecrystal x-ray diffractometer, x-ray scattering can be used to obtain structural information on ultra-thin heteroepitaxial layers. In this paper the experimental techniques are briefly outlined and illustrated by measurements from a 200 Å thick AlInAs layer grown on an InP substrate.