| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-597 - C5-604 | |
| DOI | https://doi.org/10.1051/jphyscol:19875129 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-597-C5-604
DOI: 10.1051/jphyscol:19875129
1 Kopin Corporation, 695 Myles Standish Blvd, Taunton, MA 02780, U.S.A.
2 Instruments Inc., Dallas, TX 75265, U. S. A.
J. Phys. Colloques 48 (1987) C5-597-C5-604
DOI: 10.1051/jphyscol:19875129
EPITAXY AND DEVICE APPLICATIONS OF GaAs ON Si
JHANG W. LEE1, H. SHICHIJO2 et L.T. TRAN21 Kopin Corporation, 695 Myles Standish Blvd, Taunton, MA 02780, U.S.A.
2 Instruments Inc., Dallas, TX 75265, U. S. A.
Abstract
Recent results of GaAs on Si epitaxy and device fabrication are reviewed. Emphasis is on the growth initiation procedures, defect reduction processes, and integrated circuit fabrication. The effects of Si substrate orientation and substrate temperature on the GaAs layer properties are detailed. Stress related issues are also discussed.