| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-33 - C5-40 | |
| DOI | https://doi.org/10.1051/jphyscol:1987505 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-33-C5-40
DOI: 10.1051/jphyscol:1987505
Department of Materials Science and Metallurgy, Pembroke Street, GB-Cambridge CB2 3QZ, Great-Britain
J. Phys. Colloques 48 (1987) C5-33-C5-40
DOI: 10.1051/jphyscol:1987505
T.E.M. TECHNIQUES FOR THE ATOMIC LEVEL CHARACTERISATION OF NANOMETRE SCALE MULTILAYERS
W.M. STOBBSDepartment of Materials Science and Metallurgy, Pembroke Street, GB-Cambridge CB2 3QZ, Great-Britain
Abstract
The transmission electron microscope techniques which can be applied to the atomic level characterisation of interfaces, heterostructures and multilayer systems are described. Many of the approaches required are indirect. This is partially because of the need to differentiate the effects of a displacement from those of a composition change and partially because of the general problem of ensuring that a given structural model provides a unique fit between a set of simulated images and those obtained experimentally.