| Numéro |
J. Phys. Colloques
Volume 46, Numéro C8, Décembre 1985
Third International Conference on the Structure of Non-Crystalline Materials
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|---|---|---|
| Page(s) | C8-597 - C8-601 | |
| DOI | https://doi.org/10.1051/jphyscol:1985895 | |
Third International Conference on the Structure of Non-Crystalline Materials
J. Phys. Colloques 46 (1985) C8-597-C8-601
DOI: 10.1051/jphyscol:1985895
Corporate Research Science Laboratories, Exxon Research and Engineering Company, Annandale, N.J. 08801, U.S.A.
J. Phys. Colloques 46 (1985) C8-597-C8-601
DOI: 10.1051/jphyscol:1985895
STRUCTURE OF AMORPHOUS SOLID INTERFACES USING COMPOSITIONALLY MODULATED SUPERLATTICES
P.D. Persans, A.F. Ruppert, B. Abeles, T. Tiedje and H. StasiewskiCorporate Research Science Laboratories, Exxon Research and Engineering Company, Annandale, N.J. 08801, U.S.A.
Résumé
L'état de mélange à l'interface solide-solide d'alliages amorphes Si-H/Ge-H est déterminé par spectrométrie Raman sur des échantillons à structure de superréseaux. L'interface paraît être une simple monocouche de mélange Si-Ge séparant les matériaux purs de part et d'autre.
Abstract
We demonstrate the use of amorphous superlattice structures combined with quantitative Raman spectroscopy to study the extent of intermixing at as-grown a-Si : H/a-Ge : H solid-solid interfaces. We find that the interface can be described by ~ one monolayer of randomly mixed Si and Ge bounded by pure materials.