| Numéro |
J. Phys. Colloques
Volume 43, Numéro C5, Décembre 1982
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
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|---|---|---|
| Page(s) | C5-491 - C5-503 | |
| DOI | https://doi.org/10.1051/jphyscol:1982560 | |
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
J. Phys. Colloques 43 (1982) C5-491-C5-503
DOI: 10.1051/jphyscol:1982560
1 British Telecom Research Laboratories, Martlesham Heath, Ipswich, Suffolk IP5 7BE, England
2 Queen Mary College, Chemistry Department, Mile End Road, London E1 4NS, England.
J. Phys. Colloques 43 (1982) C5-491-C5-503
DOI: 10.1051/jphyscol:1982560
A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS
A.K. Chatterjee1, M.M. Faktor2, R.H. Moss1 et E.A.D. White11 British Telecom Research Laboratories, Martlesham Heath, Ipswich, Suffolk IP5 7BE, England
2 Queen Mary College, Chemistry Department, Mile End Road, London E1 4NS, England.
Abstract
The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in particular the use of InMe3.PEt3 for the growth of InP. A simple, small-scale apparatus, which utilises the safety and handleability of these adducts is described. The InP epitaxial layers obtained were of good crystallographic quality with background carrier concentrations down to 2 x 1015 cm-3. The relative advantages of adducts over conventional metal alkyls is discussed, as well as the ideal requirements of metallo-organic sources for MOCVD. The future potential of both the simplified growth system and the adducts is considered.