| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|
|---|---|---|
| Page(s) | C6-673 - C6-675 | |
| DOI | https://doi.org/10.1051/jphyscol:19816197 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-673-C6-675
DOI: 10.1051/jphyscol:19816197
Institute of Physics, University of Aarhus, DK-8000 Arhus C, Denmark
J. Phys. Colloques 42 (1981) C6-673-C6-675
DOI: 10.1051/jphyscol:19816197
VIBRATIONS OF SUBSTITUTIONAL IMPURITIES IN SEMICONDUCTORS
O.H. NielsenInstitute of Physics, University of Aarhus, DK-8000 Arhus C, Denmark
Abstract
The Green's function technique has been studied in detail, permitting numerical calculations of mean-square amplitudes in perfect and impure lattices. The 119Sn substitutional atom is distinguished by being an isovalent impurity in Si, Ge and α-Sn, and by being an amphoteric dopant in the III-V semiconductors. Several impurity models are employed for quantitative interpretation of Mössbauer Debye-Waller factors from a systematic study by Weyer et al.