| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|
|---|---|---|
| Page(s) | C4-849 - C4-851 | |
| DOI | https://doi.org/10.1051/jphyscol:19814187 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-849-C4-851
DOI: 10.1051/jphyscol:19814187
1 Istituto di Fisica "G. Marconi", Università di Roma, Rome, Italy.
2 Centro di Studio per la Chemica dei Plasmi del C.N.R., Bari, Italy.
J. Phys. Colloques 42 (1981) C4-849-C4-851
DOI: 10.1051/jphyscol:19814187
PHOTOLUMINESCENCE STUDIES ON a-Si : H : Cl FILMS
F. Evangelisti1, P. Fiorini1, G. Fortunato1, A. Frova1, G. Bruno2, P. Capezzuto2 and F. Cramarossa21 Istituto di Fisica "G. Marconi", Università di Roma, Rome, Italy.
2 Centro di Studio per la Chemica dei Plasmi del C.N.R., Bari, Italy.
Abstract
We report photoluminescence measurements on a-Si : H : Cl. The spectra show that three different transitions can occur at 0.75, 0.95 and 1.3 eV, their individual presence being dependent on growth conditions. It is found that the gas composition in the reactor is the main parameter which influences the overall radiative efficiency by determining the quality of the films.