| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-605 - C4-608 | |
| DOI | https://doi.org/10.1051/jphyscol:19814132 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-605-C4-608
DOI: 10.1051/jphyscol:19814132
L.E.T.I., Commissariat à l'Energie Atomique, 85X - 38041 Grenoble, France
J. Phys. Colloques 42 (1981) C4-605-C4-608
DOI: 10.1051/jphyscol:19814132
THERMAL AND OPTICAL SPACE CHARGE SPECTROSCOPY OF GAP STATES IN a-Si:H
A. Chenevas-Paule and J. DijonL.E.T.I., Commissariat à l'Energie Atomique, 85X - 38041 Grenoble, France
Abstract
In this article we present a new method based on TSC (Thermally Stimulated Currents) wich allows the observation of deep centres in amorphous semiconductors. This technique allows to eliminate the experimental contribution of the band tail states in the space charge zone of a Schottky barrier. We discuss the characteristics of the deep centres thereby revealed and their connection with the existence of structural microinhomogeneities.