| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-523 - C4-526 | |
| DOI | https://doi.org/10.1051/jphyscol:19814112 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-523-C4-526
DOI: 10.1051/jphyscol:19814112
Fachbereich Physik, Universität Marburg, F.R.G.
J. Phys. Colloques 42 (1981) C4-523-C4-526
DOI: 10.1051/jphyscol:19814112
FIELD EFFECT STUDIES ON a-Si:H FILMS
M. Grünewald, K. Weber, W. Fuhs and P. ThomasFachbereich Physik, Universität Marburg, F.R.G.
Abstract
The density of localized gap states N(E) is calculated using a new scheme, which computes the charge density ρ (V) without explicit solution of Poisson's equation directly from the experimental field effect data avoiding fitting procedures and loops. - In a second step N(E) is computed from ρ (V) considering finite temperature statistics. This method is applied to measurements on undoped glow discharge deposited a-Si:H films. It is found that high temperature annealing as well as strong illumination raise the density of states near midgap by about one order of magnitude.