| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-91 - C4-96 | |
| DOI | https://doi.org/10.1051/jphyscol:1980416 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-91-C4-96
DOI: 10.1051/jphyscol:1980416
1 Solid State Division, Oak Ridge National Laboratory Oak Ridge, TN 37830
2 North Texas State University, Denton, TX 76203
3 Motorola Inc., Phoenix, Arizona
J. Phys. Colloques 41 (1980) C4-91-C4-96
DOI: 10.1051/jphyscol:1980416
NONEQUILIBRIUM SOLUBILITY AND SEGREGATION IN ION IMPLANTED, LASER ANNEALED SILICON
S.R. Wilson1, 2, 3, C.W. White1, F.W. Young1, Jr.1, B.R. Appleton1 et J. Narayan11 Solid State Division, Oak Ridge National Laboratory Oak Ridge, TN 37830
2 North Texas State University, Denton, TX 76203
3 Motorola Inc., Phoenix, Arizona
Abstract
Ion scattering and channelling measurements show that the rapid liquid phase epitaxial recrystallization induced by pulsed laser annealing incorporates ion implanted As, Sb, Ga, In and Bi into substitutional lattice sites up to maximum concentrations, Cmaxs, which greatly exceed equilibrium solid solubility limits. Model calculations require a distribution coefficient from the liquid far greater than the equilibrium value to explain the measured concentration profiles. When the total dopant concentration considerably exceeds Cmaxs, a cell structure is formed in the near surface region, presumably as a result of constitutional supercooling at the liquid solid interface during solidification.