| Numéro |
J. Phys. Colloques
Volume 49, Numéro C8, Décembre 1988
Proceedings of the International Conference on Magnetism
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|---|---|---|
| Page(s) | C8-1747 - C8-1748 | |
| DOI | https://doi.org/10.1051/jphyscol:19888795 | |
Proceedings of the International Conference on Magnetism
J. Phys. Colloques 49 (1988) C8-1747-C8-1748
DOI: 10.1051/jphyscol:19888795
Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152, Japan
J. Phys. Colloques 49 (1988) C8-1747-C8-1748
DOI: 10.1051/jphyscol:19888795
DEPENDENCE OF SATURATION MAGNETIZATION OF Fe-Ti SPUTTERED FILMS ON Ar GAS PRESSURE, SUBSTRATE TEMPERATURE AND BIAS VOLTAGE
Satoshi Ono, Makoto Sumide et Masahiko NaoeTokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152, Japan
Abstract
The dependences of saturation magnetization Ms of Fe-Ti sputtered films on Ti content and typical sputtering conditions were studied. The substrate temperature Ts had the most remarkable effect on Ms. Ti content of the films deposited at Ts above 300 °C was higher for Ms to become zero at room temperature.