Optical Bistability - IV
J. Phys. Colloques 49 (1988) C2-87-C2-90
DOI: 10.1051/jphyscol:1988219
NONLINEARITY OF THIN-FILM SEMICONDUCTOR INTERFEROMETERS DUE TO INTERLAYER BOUNDARY PHOTOEMF AND ELECTROOPTIC PROCESSES
F.V. KARPUSHKOInstitute of Physics, BSSR Academy of Sciences, Minsk 220602, USSR
Abstract
The thin-film semiconductor interferometers arc considered as dimensional optical and electric structures. It is shown that in bistable devices based on A2B6 and A3B5 semiconductors thin-film interferometers a switching time of ~ 10-12 s and switching energy of ~ 104 photons/device can be obtained.