Numéro
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
Page(s) C8-179 - C8-183
DOI https://doi.org/10.1051/jphyscol:1986833
EXAFS and Near Edge Structure IV

J. Phys. Colloques 47 (1986) C8-179-C8-183

DOI: 10.1051/jphyscol:1986833

THE USE OF PHOTON STIMULATED ION DESORPTION SEXAFS IN THE DETERMINATION OF SURFACE STRUCTURE

G. THORNTON1, D.R. WARBURTON2, I.W. OWEN3, C.H. RICHARDSON4, R. McGRATH5, I.T. McGOVERN5 et D. NORMAN1

1  Also at Science and Engineering Research Council, Daresbury Laboratory, GB-Warrington WA4 4AD, Great-Britain
2  Chemistry Department, Manchester University, GB-Manchester, M13 9PL, Great-Britain
3  Vacuum Generators Ltd. Menzies Road, GB-Hastings TN34 1YQ, East Sussex, Great-Britain
4  V.G. Scientific Ltd, The Birches Industrial Estate, Imberhorne Lane, GB-East Grinstead RH19 1UB, West Sussex, Great-Britain
5  Department of Pure and Applied Physics, Trinity College, Dublin 2, Ireland


Abstract
Two studies of photon stimulated ion desorption are described. Both involved the study of dissociative H2O adsorption, the substrates being stepped SrTiO3 (100), and Si(100). In the case of the Si(100) substrate, a direct PSID mechanism dominates the H+ yield at the Si K-edge allowing important structural information to be determined from the SEXAFS. In contrast, only bulk information is obtained from the SrTiO3(100) ion yield at the Sr L1 and Ti K edges because a non-local mechanism of ion desorption dominates. The most likely reason for this difference in behaviour is related to the positions of lower-energy substrate absorption edges.