| Numéro |
J. Phys. Colloques
Volume 47, Numéro C7, Novembre 1986
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
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|---|---|---|
| Page(s) | C7-75 - C7-80 | |
| DOI | https://doi.org/10.1051/jphyscol:1986714 | |
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C7-75-C7-80
DOI: 10.1051/jphyscol:1986714
Department of Systems Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Japan
J. Phys. Colloques 47 (1986) C7-75-C7-80
DOI: 10.1051/jphyscol:1986714
HIGH-FIELD CRYSTAL GROWTH
F. OKUYAMADepartment of Systems Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Japan
Abstract
The high-field crystal growth, which refers to crystal growth events occurring on metallic substrates placed in an intense electric field, differs essentially from conventional crystal growths, in that its particle supply process is governed by electrostatic forces. This paper reviews related topics including a recent finding by an industrial research group. The underlying physical processes are also discussed briefly.