PRESSURE-INDUCED SEMICONDUCTOR-TO-METAL TRANSITION IN LIQUID Te-Se MIXTURES

M. Yao; K. Suzuki; H. Hoshino; H. Endo

doi:doi:10.1051/jphyscol:1980807

Fourth International Conference on Liquid and Amorphous Metals

J. Phys. Colloques 41 (1980) C8-28-C8-31
DOI: 10.1051/jphyscol:1980807

PRESSURE-INDUCED SEMICONDUCTOR-TO-METAL TRANSITION IN LIQUID Te-Se MIXTURES

M. Yao¹, K. Suzuki², H. Hoshino³ et H. Endo¹

¹ Department of Physics, Faculty of Science, Kyoto University, Kyoto 606, Japan.
² College of General Education, University of Tokyo, Tokyo 153, Japan.
³ Faculty of Education, Hirosaki University, Hirosaki 036, Japan.

Abstract
The electrical conductivity σ, the thermoelectric power S and the sound velocity C have been measured for liquid Te-Se mixtures in a wide temperature and pressure range. Substantial changes in σ and S from semiconducting to metallic values are induced by a slight application of pressure. The region where such changes occur is determined on the concentration-temperature plane and in that region the prominent maxima in the temperature variations of compressibility appear. It is suggested that the observed semiconductor-to-metal transition is originated from the structural change.