PREPARATION AND PROPERTIES OF THIN FILM MATERIALS WITH PEROVSKITE TYPE STRUCTURE (MIXED OXIDES ABO₃)

Abstract
Barium Titanate (BaTiO₃) and Lithium Niobate (LiNbO₃) thin films (0,2 to 1 µm) were deposited onto Platinum foils and Silicon wafers (M. I. S. capacitor structure). In the present work, polycristalline films which had been prepared by R. F. cathodic sputtering of ceramic targets were studied. With a substrate temperature below 300 °C during the deposition, good insulating amorphous films with a low dielectric constant were obtained, but with a postdeposition heat treatment (˜ 600 °C) the deposits show some ferroelectric properties (high dielectric constant, non linearity, etc...). However, the magnitude of the phenomena is still small and difficult to control, but these encouraging results justify a continuation of the study.