Supplément au Journal de Physique Colloques

EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR

J. L. REGOLINI, D. BENSAHEL, J. MERCIER and E. SCHEID

J. Phys. Colloques, 50 C5 (1989) C5-519-C5-527

DOI: 10.1051/jphyscol:1989561

J. L. REGOLINI

D. BENSAHEL

J. MERCIER

E. SCHEID

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