Supplément au Journal de Physique Colloques

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

R. BELLENS, P. HEREMANS, G. GROESENEKEN and H.E. MAES

J. Phys. Colloques, 49 C4 (1988) C4-651-C4-655

DOI: 10.1051/jphyscol:19884136

R. BELLENS

P. HEREMANS

G. GROESENEKEN

H.E. MAES

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