La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme strong>CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
A. Carabelas, D. Nobili, S. Solmi
J. Phys. Colloques, 43 C1 (1982) C1-187-C1-192
Citations de cet article :
Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation
Hannes Wagner, Amir Dastgheib-Shirazi, Byungsul Min, et al.
Journal of Applied Physics 119 (18) 185704 (2016)
DOI: 10.1063/1.4949326
Voir cet article
Detecting Dopant Diffusion Enhancement at Grain Boundaries in Multicrystalline Silicon Wafers With Microphotoluminescence Spectroscopy
Hieu T. Nguyen, Sudha Mokkapati and Daniel Macdonald
IEEE Journal of Photovoltaics 7 (2) 598 (2017)
DOI: 10.1109/JPHOTOV.2017.2650561
Voir cet article
Atomic-scale redistribution of dopants in polycrystalline silicon layers
S. Duguay, A. Colin, D. Mathiot, P Morin and D. Blavette
Journal of Applied Physics 108 (3) 034911 (2010)
DOI: 10.1063/1.3466783
Voir cet article
Analysis of thermodynamic properties and phase equilibria in the Si-P system
N. A. Arutyunyan, A. I. Zaitsev and N. G. Shaposhnikov
Russian Journal of Physical Chemistry A 85 (6) 911 (2011)
DOI: 10.1134/S0036024411060057
Voir cet article
Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus
F. Alexander Wolf, Alberto Martinez-Limia, Daniela Grote, Daniel Stichtenoth and Peter Pichler
IEEE Journal of Photovoltaics 5 (1) 129 (2015)
DOI: 10.1109/JPHOTOV.2014.2362358
Voir cet article
Electrical measurement of the dopant segregation profile at the grain boundary in silicon bicrystals
A. Broniatowski
Journal of Applied Physics 64 (9) 4516 (1988)
DOI: 10.1063/1.341279
Voir cet article
A mechanistic study of impurity segregation at silicon grain boundaries
Peter Käshammer and Talid Sinno
Journal of Applied Physics 118 (9) 095301 (2015)
DOI: 10.1063/1.4929637
Voir cet article
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S. Solmi, A. Parisini, R. Angelucci, et al.
Physical Review B 53 (12) 7836 (1996)
DOI: 10.1103/PhysRevB.53.7836
Voir cet article
Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells
AnYao Liu, Di Yan, Jennifer Wong-Leung, Li Li, Sieu Pheng Phang, Andres Cuevas and Daniel Macdonald
ACS Applied Energy Materials 1 (5) 2275 (2018)
DOI: 10.1021/acsaem.8b00367
Voir cet article
Grain boundaries in semiconductors
C R M Grovenor
Journal of Physics C: Solid State Physics 18 (21) 4079 (1985)
DOI: 10.1088/0022-3719/18/21/008
Voir cet article
Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon
A. A. Istratov, W. Huber and E. R. Weber
Applied Physics Letters 85 (19) 4472 (2004)
DOI: 10.1063/1.1819512
Voir cet article
Jonathan Steffens, Johannes Rinder, Giso Hahn and Barbara Terheiden
2149 040018 (2019)
DOI: 10.1063/1.5123845
Voir cet article
Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells
Zhongshu Yang, Jan Krügener, Frank Feldmann, Jana-Isabelle Polzin, Bernd Steinhauser, Matvei Aleshin, Tien T. Le, Daniel Macdonald and AnYao Liu
Solar RRL 2200578 (2022)
DOI: 10.1002/solr.202200578
Voir cet article