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Ternary Compounds, Organic Semiconductors

Landolt-Börnstein - Group III Condensed Matter, Ternary Compounds, Organic Semiconductors 41E 1 (2000)
https://doi.org/10.1007/10717201_919

Ternary Compounds, Organic Semiconductors

Landolt-Börnstein - Group III Condensed Matter, Ternary Compounds, Organic Semiconductors 41E 1 (2000)
https://doi.org/10.1007/10717201_941

Surface Characterization of Hydrogenated Silicon Powder Made by the Laser-Induced Decomposition of Silane

THOMAS M. KRAMER, WENDELL E. RHINE and H. KENT BOWEN
Advanced Ceramic Materials 3 (3) 244 (1988)
https://doi.org/10.1111/j.1551-2916.1988.tb00210.x

Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects

R. W. Collins
Applied Physics Letters 53 (12) 1086 (1988)
https://doi.org/10.1063/1.100029

Laser-induced chemical vapor deposition of hydrogenated amorphous silicon. II. Film properties

M. Meunier, J. H. Flint, J. S. Haggerty and D. Adler
Journal of Applied Physics 62 (7) 2822 (1987)
https://doi.org/10.1063/1.339413

Impurity doping in chemically vapor-deposited amorphous hydrogenated silicon from disilane

Y. Ashida, Y. Mishima, M. Hirose and Y. Osaka
Journal of Applied Physics 55 (6) 1425 (1984)
https://doi.org/10.1063/1.333395

Plasma-hydrogenation effects and the thickness dependence of electrical properties and E.S.R. in undoped CVD a-Si

S. Hasegawa, D. Ando, Y. Kurata and T. Shimizu
Philosophical Magazine B 47 (2) 139 (1983)
https://doi.org/10.1080/13642812.1983.9728426