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Article cité :
H. Gottschalk
J. Phys. Colloques, 40 C6 (1979) C6-127-C6-131
Citations de cet article :
23 articles
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Photoluminescence in germanium with a quasi-equilibrium dislocation structure
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G. Vanderschaeve and D. Caillard physica status solidi (a) 202 (5) 939 (2005) https://doi.org/10.1002/pssa.200460540
Perfect and partial Frank-Read sources in silicon: A simulation
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Mechanisms of energy dissipation during displacement- sensitive indentation in Ge single crystals at elevated temperatures
B. Ya. Farber, V. I. Orlov, V. I. Nikitenko and A. H. Heuer Philosophical Magazine A 78 (3) 671 (1998) https://doi.org/10.1080/01418619808241929
A new regime of dynamic recovery in the high-temperature deformation of semiconductors
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Dislocations and their dissociation in SixGe1 - xalloys
D. Stenkamp and W. Jäger Philosophical Magazine A 65 (6) 1369 (1992) https://doi.org/10.1080/01418619208205610
The Mechanical Properties of Semiconductors
Hans Siethojf Semiconductors and Semimetals, The Mechanical Properties of Semiconductors 37 143 (1992) https://doi.org/10.1016/S0080-8784(08)62515-6
The effect of solutes on the dynamical recovery of silicon and germanium
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Plastic Deformation of GaSb and the Influence of Stacking-Fault Energy on Dynamical Recovery of Semiconductors
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Slip and twinning in high-stress-deformed GaAs and the influence of doping
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Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations
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On the yield point of floating-zone silicon single crystals II. A quantitative analysis of the dislocation structure at the lower yield point
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Dynamical recovery and self-diffusion in InP
H. Siethoff, K. Ahlborn, H. G. Brion and J. Völkl Philosophical Magazine A 57 (2) 235 (1988) https://doi.org/10.1080/01418618808204513
New phenomena in high-temperature plasticity
W. Schröter and H. Siethoff Czechoslovak Journal of Physics 35 (3) 307 (1985) https://doi.org/10.1007/BF01605101
Cross-slip in the high-temperature deformation of germanium, silicon and indium antimonide
Hans Siethoff Philosophical Magazine Part B 47 (5) 657 (1983) https://doi.org/10.1080/13642818308246467
Dark-field electron microscopy of dissociated dislocations and surface steps in silicon using forbidden reflections
A. Ourmazd, G. R. Anstis and P. B. Hirsch Philosophical Magazine A 48 (1) 139 (1983) https://doi.org/10.1080/01418618308234892
Cross-slip in the high-temperature deformation of germanium, silicon and indium antimonide
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