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Contact potential measurements with a local Kelvin probe

A. Hadjadj, B. Equer, A. Beorchia and P. Roca Cabarrocas
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https://doi.org/10.1080/13642810208223162

Ternary Compounds, Organic Semiconductors

Landolt-Börnstein - Group III Condensed Matter, Ternary Compounds, Organic Semiconductors 41E 1 (2000)
https://doi.org/10.1007/10717201_939

Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide

A. Hadjadj, P. Roca Cabarrocas and B. Equer
Philosophical Magazine Part B 76 (6) 941 (1997)
https://doi.org/10.1080/01418639708243140

Effect of primary ionization in amorphous silicon detectors

B. Equer and A. Karar
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 271 (3) 574 (1988)
https://doi.org/10.1016/0168-9002(88)90324-5

Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon

D. Mencaraglia and J. P. Kleider
Philosophical Magazine Letters 55 (2) 63 (1987)
https://doi.org/10.1080/09500838708201596

Some problems encountered during the measurement of the activation energy of dark conductivity of undoped hydrogenated amorphous silicon films

R. Meaudre
Thin Solid Films 148 (2) 121 (1987)
https://doi.org/10.1016/0040-6090(87)90149-0

Microscopic model of the Staebler-Wronski effect in intrinsic amorphous hydrogenated silicon

L. E. Mosley, M. A. Paesler and I. Shimizu
Philosophical Magazine Part B 51 (3) L27 (1985)
https://doi.org/10.1080/13642818508240570

Study of light-induced metastable defects by means of temperature-modulated space-charge-limited currents

F. Schauer and J. Koĉar;ka
Philosophical Magazine Part B 52 (1) L25 (1985)
https://doi.org/10.1080/13642818508243159

Hydrogenated Amorphous Silicon - Optical Properties

Nabil M. Amer and Warren B. Jackson
Semiconductors and Semimetals, Hydrogenated Amorphous Silicon - Optical Properties 21 83 (1984)
https://doi.org/10.1016/S0080-8784(08)62911-7

The Physics of Hydrogenated Amorphous Silicon II

Nevill Mott
Topics in Applied Physics, The Physics of Hydrogenated Amorphous Silicon II 56 169 (1984)
https://doi.org/10.1007/3540128077_4

Hydrogenated Amorphous Silicon - Electronic and Transport Properties

J. David Cohen
Semiconductors and Semimetals, Hydrogenated Amorphous Silicon - Electronic and Transport Properties 21 9 (1984)
https://doi.org/10.1016/S0080-8784(08)63066-5

Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon

S. Hasegawa, S. Shimizu and Y. Kurata
Philosophical Magazine Part B 49 (5) 511 (1984)
https://doi.org/10.1080/13642818408227659

Plasma-hydrogenation effects and the thickness dependence of electrical properties and E.S.R. in undoped CVD a-Si

S. Hasegawa, D. Ando, Y. Kurata and T. Shimizu
Philosophical Magazine Part B 47 (2) 139 (1983)
https://doi.org/10.1080/13642812.1983.9728426

Conductivity of amorphous hydrogenated silicon in the planar and sandwich configurations

D.R. Bapat, Enakshi Bhattacharya, S. Guha and K.V. Krishna
Thin Solid Films 99 (4) 339 (1983)
https://doi.org/10.1016/0040-6090(83)90058-5

Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect

J.David Cohen, David V. Lang, James P. Harbison and A.M. Sergent
Solar Cells 9 (1-2) 119 (1983)
https://doi.org/10.1016/0379-6787(83)90081-9

Doping effects on post-hydrogenated chemical-vapour-deposited amorphous silicon

J. Magario, D. Kaplan, A. Friederich and A. Deneuville
Philosophical Magazine Part B 45 (3) 285 (1982)
https://doi.org/10.1080/13642818208246405

Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

D. G. Ast and M. H. Brodsky
Philosophical Magazine Part B 41 (3) 273 (1980)
https://doi.org/10.1080/13642818008245385

Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy

J.D. Cohen, D.V. Lang, J.P. Harbison and J.C. Bean
Solar Cells 2 (3) 331 (1980)
https://doi.org/10.1016/0379-6787(80)90036-8

Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors

Nancy B. Goodman and H. Fritzsche
Philosophical Magazine Part B 42 (1) 149 (1980)
https://doi.org/10.1080/01418638008225645