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Article cité :
B. SERMAGE , F. BARTHE-LEFIN , A. C. PAPADOPOULO-SCHERLE
J. Phys. Colloques, 36 C3 (1975) C3-137-C3-143
Citations de cet article :
7 articles
Optical constants and electronic energy-band structure of AgGaSe2
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Photomodulated transmittance spectroscopy of vacuum-evaporated AgGaTe2 films
Shunji Ozaki and Takayuki Ogura Japanese Journal of Applied Physics 53 (5S1) 05FW02 (2014) https://doi.org/10.7567/JJAP.53.05FW02
Optical absorption and photoreflectance spectroscopy of the single-crystalline chalcopyrite semiconductor AgGaSe2
Takehito Hori and Shunji Ozaki Journal of Applied Physics 113 (17) (2013) https://doi.org/10.1063/1.4803892
Optical properties and electronic band structure of AgGaTe_2 chalcopyrite semiconductor
Shinya Arai, Shunji Ozaki and Sadao Adachi Applied Optics 49 (5) 829 (2010) https://doi.org/10.1364/AO.49.000829
Temperature variation of the fundamental absorption edge in AgGaSe2
E. Calderón, B. Fernández, L. Durán, et al. Physica B: Condensed Matter 404 (21) 4095 (2009) https://doi.org/10.1016/j.physb.2009.07.169
Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe2
Shunji Ozaki and Sadao Adachi Journal of Materials Science: Materials in Electronics 18 (S1) 25 (2007) https://doi.org/10.1007/s10854-007-9179-7
Anomalous temperature-dependent band gaps in CuInS_{2} studied by surface-barrier electroreflectance
T. Hsu and J. Lin Physical Review B 37 (8) 4106 (1988) https://doi.org/10.1103/PhysRevB.37.4106