Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-647 - C4-650
DOI https://doi.org/10.1051/jphyscol:19814142
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-647-C4-650

DOI: 10.1051/jphyscol:19814142

A NEW TYPE OF a-Si PREPARED BY dc SPUTTERING : P, B AND H DOPING EFFECT

Nguyen Van dong, Y. Fournier and J.Y. Le Ny

Département de Physico-Chimie, Centre d'Etudes Nucléaires de Saclay, 91191 Gif-sur-Yvette Cedex, France


Abstract
We have obtained by dc sputtering a new type of amorphous silicon having apparently a low gap states density without the compensation by hydrogen. Our amorphous films which have been prepared under special condition of heating could be easy doped either n or p-type. Conductivity and photoconductivity measurements have shown their extreme sensitivity to a small addition of phosphorus or boron. It is remarkable that hydrogen incorporated in our samples exhibits a donor-like character. H doping experiments have been performed over a large range of partial hydrogen pressures. The room temperature conductivity and photoconductivity are increased as much as 8 and 4 orders of magnitude respectively with a considerable shift of the Fermi level from the middle of the gap to within ~ 0.1 eV from the conduction band.