Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-543 - C4-546
DOI https://doi.org/10.1051/jphyscol:19814117
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-543-C4-546

DOI: 10.1051/jphyscol:19814117

PHOTOLUMINESCENCE DECAY IN a-Si : INFLUENCE OF EXCITATION DENSITY AND n-TYPE DOPING

W. Czaja1 and S. Kinmond2

1  Institute of Applied Physics, EPFL, CH-1015 Lausanne, Switzerland
2  Carnegie Lab. of Phys., University of Dundee, Scotland, U.K.


Abstract
The luminescence of undoped GD a-Si displays at short times an exponential decay. In this article, we show that the decay time constant decreases with increasing excitation density. The power law-decay at longer times is also, but only weakly changed by increased excitation density. Doping, however, has a pronounced and remarkable effect in this time domain which is explained with the existence of defect states induced by the doping.