J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-17 - C4-25|
J. Phys. Colloques 42 (1981) C4-17-C4-25
TWO DIMENSIONAL ELECTRON LOCALIZATIONM. Pepper1, 2
1 Cavendish Laboratory, Cambridge, U. K.
2 Plessey Research, Caswell, Towcester, Northants, U.K.
This paper gives a short review of recent experimental work on weak localization in silicon inversion layers. It is shown that both this effect and effects arising from the electron-electron interaction are present. These mechanisms can be distinguished by their response to a magnetic field, which enables a confirmation of the principal theoretical predictions. The localization is cut off by a magnetic field which leads to the return of metallic conduction, and, it is suggested, a minimum metallic conductance.