Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-17 - C4-25
DOI https://doi.org/10.1051/jphyscol:1981402
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-17-C4-25

DOI: 10.1051/jphyscol:1981402

TWO DIMENSIONAL ELECTRON LOCALIZATION

M. Pepper1, 2

1  Cavendish Laboratory, Cambridge, U. K.
2  Plessey Research, Caswell, Towcester, Northants, U.K.


Abstract
This paper gives a short review of recent experimental work on weak localization in silicon inversion layers. It is shown that both this effect and effects arising from the electron-electron interaction are present. These mechanisms can be distinguished by their response to a magnetic field, which enables a confirmation of the principal theoretical predictions. The localization is cut off by a magnetic field which leads to the return of metallic conduction, and, it is suggested, a minimum metallic conductance.