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MIGRATION OF FLUORINE ATOMS AND INFLUENCE ON SHALLOW P⁺N JUNCTION IN B⁺₂ IMPLANTED SILICON UNDER RTA

T.-Q. ZHANG, J.-L. LIU and X.-Y. YANG

J. Phys. Colloques, 49 C4 (1988) C4-519-C4-522

DOI: 10.1051/jphyscol:19884108

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