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THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs

J.P. Duchemin

J. Phys. Colloques, 43 C5 (1982) C5-87-C5-92

DOI: 10.1051/jphyscol:1982511

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