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Experimental and theoretical study of Σ = 3 incoherent twin boundary in β-SiC

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Philosophical Magazine A 82 (2) 215 (2002)
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Defect states and passivation mechanism at grain boundaries of zinc-blende semiconductors

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Semiconductor Science and Technology 36 (4) 045028 (2021)
DOI: 10.1088/1361-6641/abe24e
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