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Cited article:

ON THE ELECTRICAL ACTIVITY OF THE ((-1)11)-(1(-1)2) STEPS IN THE SILICON Σ = 3 TWIN BOUNDARY

J.-L. MAURICE

J. Phys. Colloques, 51 C1 (1990) C1-581-C1-586

DOI: https://doi.org/10.1051/jphyscol:1990191

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Electrical activity and microstructure of a faceted (1―11)-(11―2), Σ = 3 twin boundary in aluminium-doped silicon

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