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Cited article:

ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT

T. BENABBAS, C. CABANEL, J.Y. LAVAL, J.L. PASTOL, NGUYEN DINH HUYNH

J. Phys. Colloques, 51 C1 (1990) C1-439-C1-444

DOI: https://doi.org/10.1051/jphyscol:1990168

PDF (2.244 MB)

This article has been cited by the following article(s):

The electrical activity of IMPATT diodes on a nanometric scale by X-STEBIC method

H. Maya, C. Cabanel, J.-Y. Laval, et al.
The European Physical Journal Applied Physics 10 (1) 43 (2000)
https://doi.org/10.1051/epjap:2000118