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Cited article:
J.-L. ROUVIERE , A. BOURRET
J. Phys. Colloques, 51 C1 (1990) C1-329-C1-334
This article has been cited by the following article(s):
7 articles
Thermal conductivity and its relation to atomic structure for symmetrical tilt grain boundaries in silicon
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Finding the low-energy structures of Si[001] symmetric tilted grain boundaries with a genetic algorithm
Jian Zhang, Cai-Zhuang Wang and Kai-Ming Ho Physical Review B 80 (17) (2009) https://doi.org/10.1103/PhysRevB.80.174102
Structural change induced on an atomie scale by equilibrium sulphur segregation in tilt germanium grain boundaries
Ahmed Charaï, Mohamed Benaissa, Claude Alfonso, et al. Philosophical Magazine B 81 (11) 1821 (2001) https://doi.org/10.1080/13642810110080014
Elastic models of symmetrical 〈001〉 and 〈011〉 tilt grain boundaries in diamond
A. Nazarov, O. Shenderova and D. Brenner Physical Review B 61 (2) 928 (2000) https://doi.org/10.1103/PhysRevB.61.928
Atomic Configurations and Energetics of Arsenic Impurities in a Silicon Grain Boundary
M. F. Chisholm, A. Maiti, S. J. Pennycook and S. T. Pantelides Physical Review Letters 81 (1) 132 (1998) https://doi.org/10.1103/PhysRevLett.81.132
First-principles determination of theΣ=13{510} symmetric tilt boundary structure in silicon and germanium
J. R. Morris, Z.-Y. Lu, D. M. Ring, et al. Physical Review B 58 (17) 11241 (1998) https://doi.org/10.1103/PhysRevB.58.11241
Advances in High-Resolution Transmission Electron Microscopy
Fritz Phillipp Materials Transactions, JIM 39 (9) 888 (1998) https://doi.org/10.2320/matertrans1989.39.888