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Cited article:

IN SITU X-RAY SCATTERING STUDIES OF THE DEPOSITION OF Ge ATOMS ON Ge (111)

R.G. VAN SILFHOUT, J.W.M. FRENKEN, J.F. VAN DER VEEN, S. FERRER, A. JOHNSON, H. DERBYSHIRE, C. NORRIS, J.E. MACDONALD

J. Phys. Colloques, 50 C7 (1989) C7-295-C7-300

DOI: https://doi.org/10.1051/jphyscol:1989731

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This article has been cited by the following article(s):

The initial stage of epitaxial growth of Ge on Ge(111) as studied by X-ray diffraction

Roelof G. van Silfhout, J.F. van der Veen, S. Ferrer and C. Norris
Surface Science 264 (3) 281 (1992)
https://doi.org/10.1016/0039-6028(92)90185-9