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Cited article:

Clustering in Pb thin films on Si(111) and Pb-induced Si surface ordering

B. Rout, J. Kamila, M. Rundhe and B.N. Dev
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190 (1-4) 641 (2002)
https://doi.org/10.1016/S0168-583X(01)01214-9

Covalent-bond stabilization of the Si(111)--Pb structure

Christian Kumpf, Mourits Nielsen, Robert Feidenhans'l, Yixi Su and Robert L. Johnson
Surface Science 486 (3) L495 (2001)
https://doi.org/10.1016/S0039-6028(01)01092-5

Structural study of the commensurate–incommensurate low-temperature phase transition of Pb on Si(111)

Christian Kumpf, Oliver Bunk, Jan H. Zeysing, et al.
Surface Science 448 (2-3) L213 (2000)
https://doi.org/10.1016/S0039-6028(99)01224-8

Observation of a structural transition during the low-temperature growth of the Si(111)7×7–Pb interface

K.A. Edwards, P.B. Howes, J.E. Macdonald, et al.
Surface Science 424 (2-3) 169 (1999)
https://doi.org/10.1016/S0039-6028(98)00880-2

The Atomic Structure of the Si(111)-Pb Buried Interface Grown on the ${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Pb}$ Reconstruction

P. B. Howes, K. A. Edwards, J. E. Macdonald, et al.
Surface Review and Letters 05 (01) 163 (1998)
https://doi.org/10.1142/S0218625X98000311

Interface and overlayer structure of epitaxial CaF2 thin films on Si(111): An X-ray scattering study

K.G. Huang, J. Zegenhagen, Julia M. Phillips and J.R. Patel
Physica B: Condensed Matter 221 (1-4) 192 (1996)
https://doi.org/10.1016/0921-4526(95)00923-X

Structural study of the close-packed two-dimensional phases of Pb on Ge(111) and Si(111)

L. Seehofer, G. Falkenberg, D. Daboul and R. L. Johnson
Physical Review B 51 (19) 13503 (1995)
https://doi.org/10.1103/PhysRevB.51.13503

Soft incommensurate reconstruction on Pb/Si(111): Structure, stress modulation, and phase transition

Ing-Shouh Hwang, R. E. Martinez, Chien Liu and J. A. Golovchenko
Physical Review B 51 (15) 10193 (1995)
https://doi.org/10.1103/PhysRevB.51.10193

Influence of interfacial atomic structure on the Schottky-barrier height of Si(111)-Pb

P. B. Howes, K. A. Edwards, D. J. Hughes, et al.
Physical Review B 51 (24) 17740 (1995)
https://doi.org/10.1103/PhysRevB.51.17740

Nearly complete tuning of the Fermi level position at a prototypical metal-silicon interface: Lead on unpinned Si(111)1×1-H

V.Yu. Aristov, G. Le Lay, K. Hricovini, et al.
Journal of Electron Spectroscopy and Related Phenomena 68 419 (1994)
https://doi.org/10.1016/0368-2048(94)02142-2

Intermixing at Pb/Ge(111) and Pb/Ge(001) interfaces studied with electron-energy-loss spectroscopy

R. G. Zhao, Yun Zhang and W. S. Yang
Physical Review B 48 (11) 8462 (1993)
https://doi.org/10.1103/PhysRevB.48.8462

Surface conductivity of Si(111) 7 × 7 with submonolayer Pb-coverages

E.P.Th.M. Suurmeijer, R. Benedictus, A. van der Stadt and T.M. Klapwijk
Applied Surface Science 70-71 452 (1993)
https://doi.org/10.1016/0169-4332(93)90559-T

Intermixing at Pb/Si(111) and Pb/Si(001) interfaces studied with electron-energy-loss spectroscopy

R. G. Zhao, J. F. Jia and W. S. Yang
Physical Review B 48 (8) 5333 (1993)
https://doi.org/10.1103/PhysRevB.48.5333

Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces

D. R. Heslinga, H. H. Weitering, D. P. van der Werf, T. M. Klapwijk and T. Hibma
Physical Review Letters 64 (13) 1589 (1990)
https://doi.org/10.1103/PhysRevLett.64.1589

Comment on ‘‘Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces’’

G. Le Lay and K. Hricovini
Physical Review Letters 65 (6) 807 (1990)
https://doi.org/10.1103/PhysRevLett.65.807