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Cited article:

GROWTH ANISOTROPY AND REACTIONS MECHANISMS IN METAL ORGANICS VAPOR PHASE EPITAXY OF GaAs

P. GIBART, A. TROMSON-CARLI, Y. MONTEIL, A. RUDRA

J. Phys. Colloques, 50 C5 (1989) C5-529-C5-538

DOI: https://doi.org/10.1051/jphyscol:1989562

PDF (2.282 MB)

This article has been cited by the following article(s):

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

B Beaumont, P Gibart, M Vaille, et al.
Journal of Crystal Growth 189-190 97 (1998)
https://doi.org/10.1016/S0022-0248(98)00180-8