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Cited article:
A. FREUNDLICH
J. Phys. Colloques, 50 C5 (1989) C5-499-C5-518
This article has been cited by the following article(s):
5 articles
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Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition
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Detecting Lake Level Change From 1992 to 2019 of Zhari Namco in Tibet Using Altimetry Data of TOPEX/Poseidon and Jason-1/2/3 Missions
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Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers
Ravi Kumar, V. K. Dixit, Tapas Ganguli, et al. Journal of Applied Physics 120 (13) (2016) https://doi.org/10.1063/1.4964095
Defects in GaAs on Si studied with the positron-beam technique
E. Soininen, J. Mäkinen, P. Hautojärvi, et al. Physical Review B 46 (19) 12394 (1992) https://doi.org/10.1103/PhysRevB.46.12394