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Cited article:

UNIFIED MODEL FOR BIPOLAR TRANSISTORS INCLUDING THE VOLTAGE AND CURRENT DEPENDENCE OF THE BASE AND COLLECTOR RESISTANCES AS WELL AS THE BREAKDOWN LIMITS

F. HÉBERT, D. J. ROULSTON

J. Phys. Colloques, 49 C4 (1988) C4-371-C4-374

DOI: https://doi.org/10.1051/jphyscol:1988477

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This article has been cited by the following article(s):

Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors

Rodolfo Quintero, Antonio Cerdeira and Adelmo Ortı́z-Conde
Microelectronics Reliability 42 (1) 67 (2002)
https://doi.org/10.1016/S0026-2714(01)00131-7