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Cited article:

SELECTIVE EPITAXY BASE FOR BIPOLAR TRANSISTORS

J.N. BURGHARTZ, B.J. GINSBERG, S.R. MADER, T.-C. CHEN, D.L. HARAME

J. Phys. Colloques, 49 C4 (1988) C4-367-C4-370

DOI: https://doi.org/10.1051/jphyscol:1988476

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This article has been cited by the following article(s):

Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology

J.N. Burghartz, S.R. Mader, B.J. Ginsberg, et al.
IEEE Transactions on Electron Devices 38 (2) 378 (1991)
https://doi.org/10.1109/16.69920

J.N. Burghartz, S.R. Mader, B.S. Meyerson, B.J. Ginsberg, J.M. Stork, C. Stanis and J.Y. Sun
229 (1989)
https://doi.org/10.1109/IEDM.1989.74267