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Cited article:

Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber

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Journal of Lightwave Technology 38 (17) 4867 (2020)
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The frequency behavior of the third-order intercept point in a waveguide photodiode

H. Jiang, D.S. Shin, G.L. Li, et al.
IEEE Photonics Technology Letters 12 (5) 540 (2000)
https://doi.org/10.1109/68.841279

Equivalent circuit analysis of harmonic distortions in photodiode

H. Jiang and P.K.L. Yu
IEEE Photonics Technology Letters 10 (11) 1608 (1998)
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Monolithic integration of optical waveguide circuitry with III-V photodetectors for advanced lightwave receivers

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Journal of Lightwave Technology 11 (8) 1296 (1993)
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Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance

E.H. Bottcher, D. Kuhl, F. Hieronymi, et al.
IEEE Journal of Quantum Electronics 28 (10) 2343 (1992)
https://doi.org/10.1109/3.159541

Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination

M. Dentan and B. de Cremoux
Journal of Lightwave Technology 8 (8) 1137 (1990)
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