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Cited article:

MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE

X. GUGGENMOS

J. Phys. Colloques, 49 C4 (1988) C4-303-C4-306

DOI: https://doi.org/10.1051/jphyscol:1988463

PDF (1.215 MB)

This article has been cited by the following article(s):

Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs

D. Zupac, K.W. Baum, S.L. Kosier, R.D. Schrimpf and K.F. Galloway
IEEE Electron Device Letters 12 (10) 546 (1991)
https://doi.org/10.1109/55.119184

H. Terletzki and L. Risch
255 (1989)
https://doi.org/10.1109/ICMTS.1989.39319