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Cited article:

INTERFACE STATES PARAMETERS DEDUCED FROM DLTS, ICTS AND CONDUCTANCE METHODS ON TiAu/Si₃N₄/GaInAs MIS STRUCTURES

J. BARRIER, M. RENAUD, P. BOHER, J. SCHNEIDER

J. Phys. Colloques, 49 C4 (1988) C4-227-C4-230

DOI: https://doi.org/10.1051/jphyscol:1988447

PDF (1.044 MB)

This article has been cited by the following article(s):

Si Silicon

Eberhard F. Krimmel, Rudolf Hezel, Uwe Nohl and Rainer Bohrer
Si Silicon 80 (1991)
https://doi.org/10.1007/978-3-662-09901-8_6

Articles citing this article

Cited article:

INTERFACE STATES PARAMETERS DEDUCED FROM DLTS, ICTS AND CONDUCTANCE METHODS ON TiAu/Si3N4/GaInAs MIS STRUCTURES

This article has been cited by the following article(s):

Si Silicon

INTERFACE STATES PARAMETERS DEDUCED FROM DLTS, ICTS AND CONDUCTANCE METHODS ON TiAu/Si₃N₄/GaInAs MIS STRUCTURES