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Cited article:

CONTROL OF A SELF-ALIGNED W SILICIDE PROCESS BY ANNEALING AMBIENCE

J. TORRES, J. PALLEAU, N. BOURHILA, J.C. OBERLIN, A. DENEUVILLE, M. BENYAHIA

J. Phys. Colloques, 49 C4 (1988) C4-183-C4-186

DOI: https://doi.org/10.1051/jphyscol:1988437

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This article has been cited by the following article(s):

Influence of the preparation conditions on the formation of WNx/WSi2/Si by thermal annealing under NH3 of W on Si

A. Deneuville, M. Benyahya, M. Brunel, et al.
Applied Surface Science 38 (1-4) 139 (1989)
https://doi.org/10.1016/0169-4332(89)90529-1