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Cited article:

Detailed analysis of edge effects in SIMOX-MOS transistors

T. Elewa, B. Kleveland, S. Cristoloveanu, B. Boukriss and A. Chovet
IEEE Transactions on Electron Devices 39 (4) 874 (1992)
https://doi.org/10.1109/16.127478

Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5

M. Thurner and S. Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 9 (8) 856 (1990)
https://doi.org/10.1109/43.57786

Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation

M. Thurner, P. Lindorfer and S. Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 9 (11) 1189 (1990)
https://doi.org/10.1109/43.62756

A study of the electrical performances of isolation structures

E. Dubois, J.-L. Coppee, B. Baccus and D. Collard
IEEE Transactions on Electron Devices 37 (6) 1477 (1990)
https://doi.org/10.1109/16.106243