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This article has been cited by the following article(s):
Detailed analysis of edge effects in SIMOX-MOS transistors
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Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5
M. Thurner and S. Selberherr IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 9(8) 856 (1990) https://doi.org/10.1109/43.57786
Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation
M. Thurner, P. Lindorfer and S. Selberherr IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 9(11) 1189 (1990) https://doi.org/10.1109/43.62756
A study of the electrical performances of isolation structures
E. Dubois, J.-L. Coppee, B. Baccus and D. Collard IEEE Transactions on Electron Devices 37(6) 1477 (1990) https://doi.org/10.1109/16.106243