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Cited article:

HOT ELECTRON RELIABILITY OF DEEP SUBMICRON MOS TRANSISTORS

G. REIMBOLD, F. PAVIET-SALOMON, H. HADDARA, G. GUEGAN, S. CRISTOLOVEANU

J. Phys. Colloques, 49 C4 (1988) C4-665-C4-668

DOI: https://doi.org/10.1051/jphyscol:19884139

PDF (1.174 MB)

This article has been cited by the following article(s):

Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection

B. Boukriss, H. Haddara, S. Cristoloveanu and A. Chovet
IEEE Electron Device Letters 10 (10) 433 (1989)
https://doi.org/10.1109/55.43091