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Cited article:

GATE CURRENTS AND DEVICE DEGRADATION : CARRIER TRANSPORT IN GATE OXIDES OF MOSFET's

A. SCHWERIN, W. HÄNSCH

J. Phys. Colloques, 49 C4 (1988) C4-647-C4-650

DOI: https://doi.org/10.1051/jphyscol:19884135

PDF (1.462 MB)

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Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current

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